(China (Mainland))
Product Summary
The FDS6609A is a P-Channel Logic Level MOSFET produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. The device is well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. The applications of the FDS6609A include DC/DC converter, Load switch, Motor Drive.
Parametrics
FDS6609A absolute maximum ratings: (1)VDSS, Drain-Source Voltage: -30 V; (2)VGSS, Gate-Source Voltage: ±20 V; (3)ID, Drain Current - Continuous (Note 1a): -6.3 A; Pulsed: -40A; (4)Power Dissipation for Single Operation: 2.5A; (Note 1b), PD: 1.2W; (Note 1c), PD: 1.0W; (5)TJ, TSTG, Operating and Storage Junction Temperature Range: -55 to +150℃.
Features
FDS6609A features: (1)-6.3 A, -30 V . RDS(ON) = 0.032 W @ VGS = -10 V RDS(ON) = 0.05 W @ VGS = -4.5 V; (2)Low gate charge; (3)Fast switching speed; (4)High performance trench technology for extremely low RDS(ON); (5)High power and current handling capability.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
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 FDS6609A |
Fairchild Semiconductor |
MOSFET SO-8 |
Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||
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FDS602SP |
Other |
|
Data Sheet |
Negotiable |
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FDS602ST |
Other |
|
Data Sheet |
Negotiable |
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FDS602TX |
Other |
|
Data Sheet |
Negotiable |
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FDS6064N3 |
Fairchild Semiconductor |
MOSFET 20V N-Ch PowerTrench |
Data Sheet |
Negotiable |
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FDS6064N7 |
Fairchild Semiconductor |
MOSFET SO-8 N-CH 20V 23A |
Data Sheet |
Negotiable |
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FDS6162N3 |
Fairchild Semiconductor |
MOSFET 20V N-Ch PowerTrench |
Data Sheet |
Negotiable |
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