Product Summary
The M25P32-VMP6TG is a 32 Mbit (4M x 8) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. An enhanced Fast Program/Erase mode is available to speed up operations in factory environment. The M25P32-VMP6TG enters this mode whenever the VPPH voltage is applied to the Write Protect/Enhanced Program Supply Voltage pin (W/VPP). The memory is organized as 64 sectors, each containing 256 pages. Each page is 256 bytes wide. Thus, the whole memory can be viewed as consisting of 16384 pages, or 4,194,304 bytes.
Parametrics
M25P32-VMP6TG absolute maximum ratings: (1)TSTG, Storage temperature: -65 to 150℃; (2)TLEAD, Lead temperature during soldering: see℃; (3)VIO, Input and output voltage (with respect to Ground): -0.6 to VCC +0.6V; (4)VCC, Supply voltage: -0.6 to 4.0 V; (5)VPP, Fast Program/Erase voltage: -0.2 to 10.0 V; (6)VESD, Electrostatic Discharge Voltage (Human Body model): -2000 to 2000 V.
Features
M25P32-VMP6TG features: (1)32 Mbit of Flash memory; (2)2.7 V to 3.6 V single supply voltage; (3)SPI bus compatible serial interface; (4)75 MHz clock rate (maximum); (5)VPP = 9 V for Fast Program/Erase mode (optional); (6)Page Program (up to 256 bytes), in 0.64 ms (typical); (7)Sector Erase (512 Kbit) in 0.6 s (typical); (8)Bulk Erase: in 23 s (typical); in 17 s (typical with VPP = 9 V); (9)Deep Power-down mode 1μA (typical); (10)Electronic Signatures; (11)JEDEC standard two-byte signature (2016h); (12)Unique ID code (UID) +16 bytes of CFI data; (13)RES instruction, one-byte, signature (15h), for backward compatibility; (14)Hardware Write Protection of the memory area selected using the BP0, BP1 and BP2 bits; (15)More than 100 000 Erase/Program cycles per sector; (16)More than 20 year data retention; (17)Packages, ECOPACKR (RoHS compliant).
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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M25P32-VMP6TG |
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Negotiable |
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