(China (Mainland))
Product Summary
The FDD6672A is an N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) and fast switching speed. The application of the FDD6672A includes DC/DC converter.
Parametrics
FDD6672A absolute maximum ratings: (1)VDSS, Drain-Source Voltage: 30 V; (2)VGSS, Gate-Source Voltage: ±12 V; (3)ID, Drain Current, Continuous: 65 A; Pulsed: 100A; (4)PD, Maximum Power Dissipation @ TC = 25℃ (Note 1): 70W; @ TA = 25℃ (Note 1a) 3.2W; @ TA = 25℃ (Note 1b) 1.3W; (5)TJ, TSTG, Operating and Storage Junction Temperature Range: -55 to +150℃.
Features
FDD6672A features: (1)65 A, 30 V. RDS(ON) = 9.5 mW @ VGS = 4.5 V; RDS(ON) = 8 mW @ VGS = 10 V; (2)High performance trench technology for extremely low RDS(ON); (3)Low gate charge (33 nC typical); (4)High power and current handling capability.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 FDD6672A |
Fairchild Semiconductor |
MOSFET 30V N-Ch PowerTrench |
Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||
 |
FDD6030BL |
Fairchild Semiconductor |
MOSFET 30V N-Ch PowerTrench |
Data Sheet |
Negotiable |
|
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|
FDD6030L |
Fairchild Semiconductor |
MOSFET 30V N&P-Channel Power Trench |
Data Sheet |
Negotiable |
|
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|
FDD6030L_Q |
Fairchild Semiconductor |
MOSFET 30V N&P-Channel Power Trench |
Data Sheet |
Negotiable |
|
||||
|
FDD6035AL |
Fairchild Semiconductor |
MOSFET N-Ch PowerTrench Logic Level |
Data Sheet |
Negotiable |
|
||||
|
FDD6035AL_Q |
Fairchild Semiconductor |
MOSFET N-Ch PowerTrench Logic Level |
Data Sheet |
Negotiable |
|
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|
FDD6296 |
Fairchild Semiconductor |
MOSFET 30V N-Ch PowerTrench Fast Switching |
Data Sheet |
Negotiable |
|
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