(China (Mainland))
Product Summary
The FDS6575 is a P-Channel Logic Level MOSFET produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. The FDS6575 is well suited for notebook computer applications: load switching and power management, battery charging circuits, and DC/DC conversion.
Parametrics
FDS6575 absolute maximum ratings: (1)VDSS, Drain-Source Voltage: -20 V; (2)VGSS, Gate-Source Voltage: ±8 V; (3)ID, Drain Current, Continuous (Note 1a): -10 A; Pulsed: -50A; (4)PD, Power Dissipation for Single Operation (Note 1a): 2.5 W; (Note 1b): 1.2W; (Note 1c): 1W; (5)TJ,TSTG, Operating and Storage Temperature Range: -55 to 150℃.
Features
FDS6575 features: (1)-10 A, -20 V. RDS(ON) = 0.013 W@ VGS = -4.5 V, RDS(ON) = 0.017 W@ VGS = -2.5 V.; (2)Low gate charge (50nC typical); (3)High performance trench technology for extremely low RDS(ON); (4)High power and current handling capability.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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 FDS6575 |
Fairchild Semiconductor |
MOSFET SO-8 P-CH -20V |
Data Sheet |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||||
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FDS602SP |
Other |
|
Data Sheet |
Negotiable |
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FDS602ST |
Other |
|
Data Sheet |
Negotiable |
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FDS602TX |
Other |
|
Data Sheet |
Negotiable |
|
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FDS6064N3 |
Fairchild Semiconductor |
MOSFET 20V N-Ch PowerTrench |
Data Sheet |
Negotiable |
|
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FDS6064N7 |
Fairchild Semiconductor |
MOSFET SO-8 N-CH 20V 23A |
Data Sheet |
Negotiable |
|
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FDS6162N3 |
Fairchild Semiconductor |
MOSFET 20V N-Ch PowerTrench |
Data Sheet |
Negotiable |
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