(China (Mainland))
Product Summary
The FDS6612A is an N-Channel Logic Level MOSFET produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. The FDS6612A is well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Parametrics
FDS6612A absolute maximum ratings: (1)VDSS, Drain-Source Voltage: 30 V; (2)VGSS, Gate-Source Voltage: ±20 V; (3)ID, Drain Current, Continuous (Note 1a): 8.4 A; Pulsed: 40A; (4)PD, Power Dissipation for Single Operation, (Note 1a) 2.5 W; (Note 1b): 1.2W; (Note 1c): 1W; (5)TJ,TSTG, Operating and Storage Temperature Range -55 to 150℃.
Features
FDS6612A features: (1)8.4 A, 30 V. RDS(ON) = 0.022 W @ VGS = 10 V, RDS(ON) = 0.030 W @ VGS = 4.5 V; (2)Fast switching speed; (3)Low gate charge; (4)High performance trench technology for extremely low RDS(ON); (5)High power and current handling capability.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 FDS6612A |
Fairchild Semiconductor |
MOSFET SO-8 N-CH 30V |
Data Sheet |
Negotiable |
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|
FDS6612A_D84Z |
Fairchild Semiconductor |
MOSFET Single N-Ch LL Power Trench |
Data Sheet |
Negotiable |
|
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|
FDS6612A_Q |
Fairchild Semiconductor |
MOSFET SO-8 N-CH 30V |
Data Sheet |
Negotiable |
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