Product Summary

The FDS6670A is an N-Channel Logic Level MOSFET produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. The FDS6670A is well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

Parametrics

FDS6670A absolute maximum ratings: (1)VDSS, Drain-Source Voltage: 30 V; (2)VGSS, Gate-Source Voltage: ±20 V; (3)ID, Drain Current, Continuous (Note 1a): 13 A; Pulsed: 50A; (4)PD, Power Dissipation for Single Operation (Note 1a): 2.5 W; (Note 1b): 1.2W; (Note 1c): 1W; (5)TJ,TSTG, Operating and Storage Temperature Range: -55 to 150℃.

Features

FDS6670A features: (1)13 A, 30 V. RDS(ON) = 0.008 W @ VGS = 10 V, RDS(ON) = 0.010W @ VGS = 4.5 V; (2)Fast switching speed; (3)Low gate charge (35 nC tyical); (4)High performance trench technology for extremely low RDS(ON); (5)High power and current handling capability.

Diagrams

FDS6670A block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
FDS6670A
FDS6670A
Fairchild Semiconductor
MOSFET SO-8 N-CH 30V
Data Sheet
0-1: $0.77
1-25: $0.68
25-100: $0.55
100-250: $0.48
FDS6670A_Q
FDS6670A_Q
Fairchild Semiconductor
MOSFET SO-8 N-CH 30V
Data Sheet
0-1: $0.53
1-25: $0.51
25-100: $0.49
100-250: $0.48
FDS6670AS
FDS6670AS
Fairchild Semiconductor
MOSFET 30V N-CH POWER TRENCH SYNCFET
Data Sheet
0-1: $0.61
1-25: $0.54
25-100: $0.47
100-250: $0.41