(China (Mainland))
Product Summary
The FDS6680S is a 30V N-Channel PowerTrench SyncFET designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS (ON) and low gate charge. The FDS6680S includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology. The performance of the FDS6680S as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the FDS6680 in parallel with a Schottky diode. The applications of the FDS6680S include DC/DC converter, Motor drives.
Parametrics
FDS6680S absolute maximum ratings: (1)VDSS, Drain-Source Voltage: 30 V; (2)VGSS, Gate-Source Voltage: ±20 V; (3)ID, Drain Current, Continuous (Note 1a): 11.5 A; Pulsed 50A; (4)PD, Power Dissipation for Single Operation (Note 1a): 2.5W; (Note 1b) 1.2W; (Note 1c): 1W; (5)TJ, TSTG, Operating and Storage Junction Temperature Range: -55 to +150℃.
Features
FDS6680S features: (1)11.5 A, 30 V. RDS(ON) = 0.011Ω@ VGS = 10 V, RDS(ON) = 0.016Ω@ VGS = 4.5 V; (2)Includes SyncFET Schottky body diode; (3)Low gate charge (17nC typical); (4)High performance trench technology for extremely low RDS(ON) and fast switching; (5)High power and current handling capability.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 FDS6680S |
Fairchild Semiconductor |
MOSFET SO-8 SGL N-CH 30V |
Data Sheet |
Negotiable |
|
||||
|
FDS6680S_D84Z |
Fairchild Semiconductor |
MOSFET 30V N-Ch PowerTrench |
Data Sheet |
Negotiable |
|
||||
