Product Summary

The FDS6690A is an N-Channel Logic Level MOSFET, which is produced using Fairchild Semiconductor advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. The FDS6690A is well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

Parametrics

FDS6690A absolute maximum ratings: (1)Drain-Source Voltage: 30 V; (2)Gate-Source Voltage: ±20 V; (3)Drain Current: Continuous: 11 A, Pulsed: 50 A; (4)Power Dissipation for Single Operation PD: 2.5 W, 1.0 W; (5)Single Pulse Avalanche Energy: 96 mJ; (6)Operating and Storage Junction Temperature Range: –55 to +150 ℃.

Features

FDS6690A features: (1)11 A, 30 V. RDS(ON) = 12.5 mW @ VGS = 10 V, RDS(ON) = 17.0 mW @ VGS = 4.5 V; (2)Fast switching speed; (3)Low gate charge; (4)High performance trench technology for extremely low RDS(ON); (5)High power and current handling capability.

Diagrams

FDS6690A block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
FDS6690A
FDS6690A

Fairchild Semiconductor

MOSFET SO-8 SGL N-CH 30V

Data Sheet

0-1: $0.50
1-25: $0.44
25-100: $0.34
100-250: $0.29
FDS6690A_Q
FDS6690A_Q

Fairchild Semiconductor

MOSFET SO-8 SGL N-CH 30V

Data Sheet

Negotiable 
FDS6690AS
FDS6690AS

Fairchild Semiconductor

MOSFET 30V NCH POWER TRENCH SYNCFET

Data Sheet

0-1: $0.44
1-25: $0.39
25-100: $0.34
100-250: $0.30
FDS6690AS_NBNU001
FDS6690AS_NBNU001

Fairchild Semiconductor

MOSFET 30V N-Ch PowerTrench

Data Sheet

0-1670: $0.31
1670-2000: $0.29
2000-2500: $0.29
2500-5000: $0.28