(China (Mainland))
Product Summary
The FDS6875 is a P-Channel 2.5V specified MOSFET produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. TheFDS6875 is well suited for portable electronics applications: load switching and power management, battery charging and protection circuits.
Parametrics
FDS6875 absolute maximum ratings: (1)VDSS, Drain-Source Voltage: -20 V; (2)VGSS, Gate-Source Voltage: ±8 V; (3)ID, Drain Current, Continuous: -6 A; Pulsed: -20; (4)PD, Power Dissipation for Dual Operation: 2 W; (5)PD, Power Dissipation for Single Operation: 1.6W; (Note 1b): 1W; (Note 1c): 0.9W; (6)TJ,TSTG, Operating and Storage Temperature Range: -55 to 150℃.
Features
FDS6875 features: (1)-6 A, -20 V. RDS(ON) = 0.030 W @ VGS = -4.5 V, RDS(ON) = 0.040 W @ VGS = -2.5 V; (2)Low gate charge (23nC typical); (3)High performance trench technology for extremely low RDS(ON); (4)High power and current handling capability.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
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 FDS6875 |
Fairchild Semiconductor |
MOSFET SO-8 DUAL P-CH -20V |
Data Sheet |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||||
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FDS602SP |
Other |
|
Data Sheet |
Negotiable |
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FDS602ST |
Other |
|
Data Sheet |
Negotiable |
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FDS602TX |
Other |
|
Data Sheet |
Negotiable |
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FDS6064N3 |
Fairchild Semiconductor |
MOSFET 20V N-Ch PowerTrench |
Data Sheet |
Negotiable |
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FDS6064N7 |
Fairchild Semiconductor |
MOSFET SO-8 N-CH 20V 23A |
Data Sheet |
Negotiable |
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FDS6162N3 |
Fairchild Semiconductor |
MOSFET 20V N-Ch PowerTrench |
Data Sheet |
Negotiable |
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