Product Summary
The FDS6930A is an N-Channel Logic Level MOSFET produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. The FDS6930A is well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Parametrics
FDS6930A absolute maximum ratings: (1)VDSS, Drain-Source Voltage: 30 V; (2)VGSS, Gate-Source Voltage: ±20 V; (3)ID, Drain Current, Continuous: 5.5 A; Pulsed: 20A; (4)PD, Power Dissipation for Dual Operation: 2 W; (5)PD, Power Dissipation for Single Operation: 1.6 W; (6)TJ,TSTG, Operating and Storage Temperature Range: -55 to 150℃.
Features
FDS6930A features: (1)5.5 A, 30 V. RDS(ON) = 0.040 W @ VGS = 10 V; RDS(ON) = 0.055 W @ VGS = 4.5 V.; (2)Fast switching speed; (3)Low gate charge (typical 5 nC); (4)High performance trench technology for extremely low RDS(ON); (5)High power and current handling capability.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||
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FDS6930A |
Fairchild Semiconductor |
MOSFET SO-8 DUAL N-CH |
Data Sheet |
Negotiable |
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FDS6930A_Q |
Fairchild Semiconductor |
MOSFET SO-8 DUAL N-CH |
Data Sheet |
Negotiable |
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