(China (Mainland))
Product Summary
The IRF9410 is a Fifth Generation HEXFET from International Rectifier utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFET is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques.
Parametrics
IRF9410 absolute maximum ratings: (1)Drain-Source Voltage, VDS: 30V; (2)Gate-Source Voltage, VGS: ±20V; (3)Continuous Drain Current, TA = 25℃, ID: 7.0A; TA = 70℃: 5.8A; (4)Pulsed Drain Current, IDM: 37A; (5)Continuous Source Current (Diode Conduction), IS: 2.8A; (6)Maximum Power Dissipation, TA = 25℃, PD: 2.5W; TA = 70℃, PD: 1.6W; (7)Single Pulse Avalanche Energy, EAS: 70 mJ; (8)Avalanche Current, IAR: 4.2 A; (9)Repetitive Avalanche Energy, EAR: 0.25 mJ; (10)Peak Diode Recovery dv/dt, dv/dt: 5.0 V/ ns; (11)Junction and Storage Temperature Range, TJ, TSTG: -55 to +150℃.
Features
IRF9410 features: (1)Generation V Technology; (2)Ultra Low On-Resistance; (3)N-Channel MOSFET; (4)Surface Mount; (5)Very Low Gate Charge and Switching Losses; (6)Fully Avalanche Rated.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
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 IRF9410 |
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MOSFET N-CH 30V 7A 8-SOIC |
Data Sheet |
Negotiable |
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IRF9410PBF |
International Rectifier |
MOSFET |
Data Sheet |
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IRF9410TRPBF |
International Rectifier |
MOSFET MOSFT 30V 7A 30mOhm 18nC |
Data Sheet |
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IRF9410TR |
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MOSFET N-CH 30V 7A 8-SOIC |
Data Sheet |
Negotiable |
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