Product Summary

The NDH8304P is a P-Channel enhancement mode power field effect transistor produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. The NDH8304P is particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast high-side switching, and low in-line power loss are needed in a very small outline surface mount package.

Parametrics

NDH8304P absolute maximum ratings: (1)VDSS, Drain-Source Voltage: -20 V; (2)VGSS, Gate-Source Voltage: ±8 V; (3)ID, Drain Current, Continuous (Note 1a): -2.7 A; Pulsed: -10A; (4)PD, Maximum power dissiptation: 0.8W; (6)TJ,TSTG, Operating and Storage Temperature Range: -55 to 150℃.

Features

NDH8304P features: (1)-2.7 A, -20 V. RDS(ON) = 0.07 W @ VGS = -4.5 V, RDS(ON) = 0.095 W @ VGS = -2.7 V; (2)Proprietary SuperSOTTM-8 package design using copper lead frame for superior thermal and electrical capabilities; (3)High density cell design for extremely low RDS(ON); (4)Exceptional on-resistance and maximum DC current capability.

Diagrams

NDH8304P block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
NDH8304P_Q
NDH8304P_Q

Fairchild Semiconductor

MOSFET Dual P-Ch FET Enhancement Mode

Data Sheet

Negotiable 
NDH8304P
NDH8304P

Fairchild Semiconductor

MOSFET Dual P-Ch FET Enhancement Mode

Data Sheet

Negotiable