Product Summary

The NDS8934 is a P-Channel enhancement mode power field effect transistor produced using Fairchild’s proprietary, high cell density, DMOS technology. This very highn density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. The NDS8934 is particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

Parametrics

NDS8934 absolute maximum ratings: (1)VDSS, Drain-Source Voltage: -20 V; (2)VGSS, Gate-Source Voltage: -8 V; (3)ID, Drain Current, Continuous (Note 1a): -3.8 A; Pulsed: -15A; (4)PD, Power Dissipation for Dual Operation: 2 W; (5)PD, Power Dissipation for Single Operation (Note 1a): 1.6W; (Note 1b): 1W; (Note 1c): 0.9W; (6)TJ,TSTG, Operating and Storage Temperature Range: -55 to 150℃.

Features

NDS8934 features: (1)-3.8A, -20V. RDS(ON) = 0.07W @ VGS = -4.5V, RDS(ON) = 0.1W @ VGS = -2.7V; (2)High density cell design for extremely low RDS(ON); (3)High power and current handling capability in a widely used surface mount package; (4)Dual MOSFET in surface mount package.

Diagrams

NDS8934 block diagram

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