(China (Mainland))
Product Summary
The NDS9407 is a P-Channel enhancement mode power field effect transistor produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. The NDS9407 is particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
Parametrics
NDS9407 absolute maximum ratings: (1)VDSS, Drain-Source Voltage: -60 V; (2)VGSS, Gate-Source Voltage: ±20 V; (3)ID, Drain Current, Continuous (Note 1a): ±2.4 A; Pulsed: +12A; (4)PD, Power Dissipation for Single Operation (Note 1a): 2.5W; (Note 1b): 1.2W; (Note 1c): 1W; (5)TJ,TSTG, Operating and Storage Temperature Range: -55 to 150℃.
Features
NDS9407 features: (1)-3.0A, -60V. RDS(ON) = 0.15W @ VGS=-10V, RDS(ON) = 0.24W @ VGS=-4.5V; (2)High density cell design for extremely low RDS(ON); (3)High power and current handling capability in a widely used surface mount package.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 NDS9407_Q |
Fairchild Semiconductor |
MOSFET Single P-Ch MOSFET Power Trench |
Data Sheet |
Negotiable |
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NDS9407_D84Z |
Fairchild Semiconductor |
MOSFET Single P-Ch MOSFET Power Trench |
Data Sheet |
Negotiable |
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NDS9407 |
Fairchild Semiconductor |
MOSFET Single P-Ch MOSFET Power Trench |
Data Sheet |
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