(China (Mainland))
Product Summary
The US6M2TR is a 2.5V Drive Nch+Pch MOS FET. The application of the US6M2TR includes Switching.
Parametrics
US6M2TR absolute maximum ratings: (1)Drain-source voltage, VDSS: 30V; (2)Gate-source voltage, VGSS: 12V; (3)Drain current, continuous, ID: ±1.5A; IDP: ±6A; (4)Source current, IS: 0.6A; ISP: 6A; (5)Tatol power dissipation, PD: 1.0W; (6)Channel temperature, Tch: 150℃; (7)Storage temperature, Tstg: -55 to +150℃.
Features
US6M2TR features: (1)Nch MOS FET and PchMOS FET are put in TUMT6 package; (2)High-speed switching, lowOn-resistance; (3)Low voltage drive (2.5V drive); (4)Built-in G-S Protection Diode.
Diagrams
| Image | Part No | Mfg | Description |  |
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 US6M2TR |
ROHM Semiconductor |
MOSFET N+P 20V 1.5A/1A |
Data Sheet |
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| Image | Part No | Mfg | Description | |
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US6M1 |
Other |
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Data Sheet |
Negotiable |
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US6M1TR |
ROHM Semiconductor |
MOSFET N+P 30 20V 1A |
Data Sheet |
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US6M2TR |
ROHM Semiconductor |
MOSFET N+P 20V 1.5A/1A |
Data Sheet |
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US6M11TR |
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MOSFET N/P-CH 20V 1.5A TUMT6 |
Data Sheet |
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